Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMs
AEROSPACE CORP EL SEGUNDO CA ENGINEERING AND TECHNOLOGY GROUP
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We report the results of experiments designed to evaluate the extent to which focused electron-beam pulses simulate energetic ion upset phenomena in GaAs memory circuits fabricated by the McDonnell Douglas Astronautics Company. The results of two experimental methods were compared, irradiation by heavy-ion particle beams, and upset mapping using focused electron pulses. Linear energy transfer LET thresholds and upset cross sections are derived from the data for both methods. A comparison of results shows good agreement, indicating that for these circuits electron-beam pulse mapping is a viable simulation technique.
- Electrical and Electronic Equipment
- Nuclear Weapons