Accession Number:

ADA255901

Title:

Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMs

Descriptive Note:

Technical rept.

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA ENGINEERING AND TECHNOLOGY GROUP

Report Date:

1992-07-16

Pagination or Media Count:

13.0

Abstract:

We report the results of experiments designed to evaluate the extent to which focused electron-beam pulses simulate energetic ion upset phenomena in GaAs memory circuits fabricated by the McDonnell Douglas Astronautics Company. The results of two experimental methods were compared, irradiation by heavy-ion particle beams, and upset mapping using focused electron pulses. Linear energy transfer LET thresholds and upset cross sections are derived from the data for both methods. A comparison of results shows good agreement, indicating that for these circuits electron-beam pulse mapping is a viable simulation technique.

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Weapons

Distribution Statement:

APPROVED FOR PUBLIC RELEASE