Accession Number:

ADA255606

Title:

Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor

Descriptive Note:

Technical rept.

Corporate Author:

TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Report Date:

1992-06-04

Pagination or Media Count:

3.0

Abstract:

We have demonstrated silicon Atomic Layer EpitaxyALE using ions from an rf-excited helium plasma glow discharge which held remote from the substrate in a Remote Plasma Enhanced Chemical Vapor Deposition RPCVD system to minimize surface damage. The starting surface was a combination of dihydride and monohydride termination. The ALE experiment cycle consisted of bombarding the substrate with He ions from the plasma for 1-3 min. to desorb it followed by dosing the surface with disilane in a range of partial pressures 10 exp -7 Torr to 1.67 mTorr, temperatures 250 C-400 C and times 20 sec to 3 min. without plasma excitation to adsorb Si2H6 on the bare surface Si atoms created by the bombardment as to silylSiH3 species in a self-limiting manner which results in a hydrogen terminated surface. The maximum growth obtained was 0.44 monolayers per cycle for a 3 minute bombardment cycle. The growth per cycle decreases as the bombardment cycle time is decreased, indicating that the percentage of hydrogen removed decreases with the bombardment time.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE