Accession Number:

ADA255369

Title:

ALE Project

Descriptive Note:

Quarterly rept.,

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1992-06-01

Pagination or Media Count:

46.0

Abstract:

Using alternating exposures of Si2H6 and Si2C16, very thin Si layers have been grown on the Si100 surface at temperatures T as low as 475 deg C. Although this growth method is not truly self-limiting, some of the desired features for Si atomic layer epitaxy ALE are retained, as discussed here. The growth rate of new Si on Si100 using this method is limited by the thermal desorption of H2 and HC1. Doping the surface with boron atoms can lower the growth temperature, due to a weakening of the Si-H and Si-Cl bonds on the surface as observed in the temperature programmed desorption results from H2, HC1 and SiC12 desorption from the clean and the boron-doped Si100 surfaces.

Subject Categories:

  • Acoustics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE