Accession Number:

ADA255368

Title:

III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon)

Descriptive Note:

Final rept. 15 Nov 88-31 May 92,

Corporate Author:

ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1992-06-01

Pagination or Media Count:

39.0

Abstract:

Since the beginning of this project 10 years ago we have been concerned with quantum well heterostructures QWHs and their use in advanced forms of lasers, light emitting diodes LEDs, and more generally in optoelectronics. This has led us into a wide range of studies and discoveries, including the commercially important process patented of impurity-induced layer disordering which can be employed to change a QWH, in whatever pattern desired, from QW lower gap to bulk-crystal higher energy band gap.

Subject Categories:

  • Lasers and Masers
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE