Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications
Final rept. 1 Apr 89-31 Mar 92,
ILLINOIS UNIV AT URBANA BOARD OF TRUSTEES
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To provide the technology base that will enable SDIO capitalization on the performance advantages offered through novel engineered multiple-lavered compound semiconductor structures, this project has focussed on three specific areas 1 carbon doping of AlGaAsGaAs and InPInGaAs materials for reliable high frequency heterojunction bipolar transistors 2 impurity induced layer disordering and the environmental degradation of AlxGal-xAs-GaAs quantum-well heterostructures and the native oxide stabilization of AlxGal-xAs-GaAs quantum well heterostructure lasers and 3 non-planar and strained-layer quantum well heterostructure lasers and laser arrays. The accomplishments in this three year research are reported in fifty-six publications and the abstracts included in this report.
- Quantum Theory and Relativity