Accession Number:

ADA255287

Title:

Gate-All-Around Device

Descriptive Note:

Final technical rept. 5 Jul 1991-4 Jul 1992

Corporate Author:

INTERUNIVERSITY MICRO-ELECTRONICS CENTER LOUVAIN (BELGIUM)

Personal Author(s):

Report Date:

1992-09-04

Pagination or Media Count:

64.0

Abstract:

The gate-all-around device is an SOI MOS field-effect transistor. The gate electrode and the thin gate oxide are wrapped around the active channel region. No other insulator field oxide or buried oxide is in contact with the active region of the device. The gate-all-around device exhibits a high transconductance up to 4 times that of a normal SOI transistor, an ideally sharp subthreshold slope, and demonstrates the concept of volume inversion in the SOI films. Both n-channel and p-channel devices have been fabricated.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE