Thermal Stability of Trimethyl Indium on Si (100)-2x1 As Studied with HREELS, UPS and XPS: A Comparison with the Results from Si(111)-7x7 and Si(110) Studies
EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY
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The stability of trimethyl indium on the surface of a Si100-2xl single crystal has been investigated with UPS, XPS and HREELS. The Si dangling bonds on Si100-2xl was found to play an important role in the adsorption of TMIn, probably through the interaction with In 5 pz orbitals and thus causing a distortion and possibly slight dissociation of the In-C bonds. However, the In-C bond breaking occurred to a much smaller extent on the 100 surface, if there is any, than on Si110 and Si1117x7. In the case of the 111 surface, TMIn attacks the adatoms before the rest-atoms. When 1L-dosed samples were annealed at 520 K, the ln-C stretching vibration mode at 62 meV could still be observed in HREELS for TMIn on Si100-2xl, but not on the other two surfaces. Above 520 K, the In-C bond cracking was completed. Meanwhile C-H bond breaking also began to occur on the surface, which continued as the sample was further annealed at higher temperatures. At 950 K, only C species left on the surface following the decomposition of TMIn and the desorption of the In and H species.
- Organic Chemistry
- Physical Chemistry
- Atomic and Molecular Physics and Spectroscopy