Accession Number:

ADA255242

Title:

Thermal Stability of Trimethyl Indium on Si (100)-2x1 As Studied with HREELS, UPS and XPS: A Comparison with the Results from Si(111)-7x7 and Si(110) Studies

Descriptive Note:

Technical rept.

Corporate Author:

EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1992-01-01

Pagination or Media Count:

21.0

Abstract:

The stability of trimethyl indium on the surface of a Si100-2xl single crystal has been investigated with UPS, XPS and HREELS. The Si dangling bonds on Si100-2xl was found to play an important role in the adsorption of TMIn, probably through the interaction with In 5 pz orbitals and thus causing a distortion and possibly slight dissociation of the In-C bonds. However, the In-C bond breaking occurred to a much smaller extent on the 100 surface, if there is any, than on Si110 and Si1117x7. In the case of the 111 surface, TMIn attacks the adatoms before the rest-atoms. When 1L-dosed samples were annealed at 520 K, the ln-C stretching vibration mode at 62 meV could still be observed in HREELS for TMIn on Si100-2xl, but not on the other two surfaces. Above 520 K, the In-C bond cracking was completed. Meanwhile C-H bond breaking also began to occur on the surface, which continued as the sample was further annealed at higher temperatures. At 950 K, only C species left on the surface following the decomposition of TMIn and the desorption of the In and H species.

Subject Categories:

  • Organic Chemistry
  • Physical Chemistry
  • Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE