III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides
ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures T 550 deg C. However, higher annealing temperatures T 600 deg C result in a reduction of the hole concentration reaching a maximum carrier concentration of 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms 1 the passivation of carbon acceptors by hydrogen incorporated during growth and 2 the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.
- Lasers and Masers