Accession Number:

ADA255239

Title:

III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices (On Silicon). Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectrnic Devices: A1-Based III-V Native Oxides

Descriptive Note:

Final rept.

Corporate Author:

ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1992-05-01

Pagination or Media Count:

38.0

Abstract:

Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures T 550 deg C. However, higher annealing temperatures T 600 deg C result in a reduction of the hole concentration reaching a maximum carrier concentration of 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms 1 the passivation of carbon acceptors by hydrogen incorporated during growth and 2 the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE