Ferroelectric Memory Devices and a Proposed Standardized Test System Design
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Pagination or Media Count:
Ferroelectric bulk material devices have been in existence for over 20 years. Not until recently has there been fabrication techniques that consistently and feasibly produce thin film ferroelectric materials. The physical characteristics of thin film ferroelectric capacitors and their subsequent integration into memory design may prove ferroelectric memory devices to be the ultimate in design for nonvolatile, radiation hard computer memory. This thesis describes current memory systems, some of the recent achievements in ferroelectrics and the prospects for further application of ferroelectrics as an alternative for current memory design. It explores the different testing methodologies being implemented to test ferroelectric devices and suggests a flexible, fully programmable and autonomous new test system design that allows high speed aging and fatigue testing of on-chip ferroelectric capacitors for memory applications. Current memory, ferroelectric capacitor, stress measurement system, standardized test system.
- Computer Hardware
- Manufacturing and Industrial Engineering and Control of Production Systems