Back-Gate Bias Generator.
Final technical rept. 5 Jul 91-4 Jul 92,
INTERUNIVERSITY MICRO-ELECTRONICS CENTER LOUVAIN (BELGIUM)
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The back-gate generator is a small circuit element which allow for the compensation of the threshold voltage shift generated in silicon-on-insulator MOS transistors by ionizing radiations. This device is integrated on a regular SOI chip. It senses the threshold shifts and applies a back-gate voltage designed to nullfy this shift induced by the external harsh environment. Silicon-on-insulator devices and circuits.
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