Accession Number:

ADA255019

Title:

RF Vacuum Microelectronics

Descriptive Note:

Quarterly technical rept. no. 1, 20 Apr-30 Jun 1992

Corporate Author:

HUGHES AIRCRAFT CO TORRANCE CA ELECTRON DYNAMICS DIV

Personal Author(s):

Report Date:

1992-06-30

Pagination or Media Count:

8.0

Abstract:

Since this is the first quarterly progress report, a brief review will be given of the basic Hughes process as developed up through 1990 to create FEAs. Uniform pyramidal tips are defined when a 100 Si substrate is etched through a Si3N4 mask using KOH. The width of the opening determines the depth of this self-limiting etch. The result is a crystallographically sharp pyramidal hole formed by the 111 planes. Any desired array pattern of these holes can be formed. These holes are subsequently thermally oxidized to produce a thin oxide etch barrier, and this etched Si wafer then becomes a mold or negative of the desired array of tips. Polysilicon is deposited into the mold and built up to a self-supporting thickness. The mold is then etched away leaving a array of uniform polysilicon tips on a self-supporting polysilicon substrate.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE