Growth of Solid Solutions of Aluminum Nitride and Silicon Carbide by Metalorganic Chemical Vapor Deposition
Semiannual rept. 25 Nov 1991-1 Jul 1992
HOWARD UNIV WASHINGTON DC DEPT OF ELECTRICAL ENGINEERING
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We report the growth of solid solutions of AlNxSiC1-x over the entire composition range from x0.1 to x0.9. We believe this is the first report of solid solution of AlNxSiC1-x by metal organic vapor deposition. Growth was performed in a low pressure vertical reactor using the silane-propane-ammoniatrimethylaluminium-hydrogen gas system on both silicon and silicon carbide substrates. Growth temperatures were between 1200-1250 deg C and growth pressures varied between 10 and 76 Torr. The composition of the solid solutions were strongly dependent on system pressure.
- Inorganic Chemistry
- Physical Chemistry