Group II Cubic Fluorides Dielectrics for 3-D Integration and GaAs-Based Optoelectronic Structures
Final rept. Jun 1989-May 1992
PRINCETON UNIV NJ DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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The epitaxial growth of CaxSr1-x,F2GaAs100 and GaAsCaxSr1- xF2100 is investigated. Optimum growth temperature of 530 deg C growth rate of 1 Angstromsee and composition x0.47 lead to very high crystallinity layers of mixed fluorides on GaAs. The growth of GaAsCa0.47SrO.053F2100, rendered much more difficult by the morphology and faceting of the insulating surface, is substantially improved by modifying the fluoride surface by electron irradiation prior to GaAs growth, and by a two-step growth sequence where the interface GaAs is grown at low temperature 300 deg C. Finally, the patterning of the fluoride layer is performed by e-beam exposure. Features as small as 1 micron are drawn and developed on a 2000 A thick CaF2 layer, opening the possibility of using the fluorides for wave-guides or re-growth of small III-V features. Semiconductorinsulator interfaces GaAs Ca x Sr 1-x F2 molecular bean epitaxy.
- Electrooptical and Optoelectronic Devices
- Solid State Physics