Accession Number:

ADA254883

Title:

VLSI Reliability Research

Descriptive Note:

Final rept.,

Corporate Author:

CALIFORNIA UNIV BERKELEY DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

1992-08-06

Pagination or Media Count:

7.0

Abstract:

Aggressive scaling toward submicron VLSI technologies has greatly heightened the need for a better basic understanding of the reliability failure mechanisms and the need for better testing methods and technological solutions. This project researched these issues for the four leading failure models of VLSI systems oxide wearout, radiation effects, hot-electron-induce degradation, and interconnect and contact electromigration. We have developed quantitative physical not simply empirical models for the failure mechanisms, more accurate methods for testing, screening and reliability prediction, and explored promising new technologies for improved VLSI reliability. Many of the research results have already been accepted and used by the semiconductor industry.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE