GaAs Gate Dynamic Memory Technology
Final rept. 1 Feb 1989-31 Dec 1991
PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING
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During the course of this work the charge storage times of isolated GaAs pn-junction storage capacitors was increased from 20 minutes to over 10 hours at room temperature. This was accomplished through a combination of improved epitaxy, device processing, and device structure. Furthermore complete DRAM cells were demonstrated using JFET-, MESFET-, MODFET-, and HBT-access transistors. The research supported by this contract has resulted in 21 journal publications and 18 conference papers.
- Electrical and Electronic Equipment
- Recording and Playback Devices