Accession Number:

ADA254801

Title:

GaAs Gate Dynamic Memory Technology

Descriptive Note:

Final rept. 1 Feb 1989-31 Dec 1991

Corporate Author:

PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

• Melloch, Michael R.
• Cooper, Jr, James A.

Report Date:

1992-06-01

Pagination or Media Count:

88.0

Abstract:

During the course of this work the charge storage times of isolated GaAs pn-junction storage capacitors was increased from 20 minutes to over 10 hours at room temperature. This was accomplished through a combination of improved epitaxy, device processing, and device structure. Furthermore complete DRAM cells were demonstrated using JFET-, MESFET-, MODFET-, and HBT-access transistors. The research supported by this contract has resulted in 21 journal publications and 18 conference papers.

Descriptors:

• *GALLIUM ARSENIDES
• *FIELD EFFECT TRANSISTORS
• *SEMICONDUCTOR JUNCTIONS
• *CAPACITORS
• *MEMORY DEVICES
• TEMPERATURE
• CONTRACTS
• DOCUMENTS
• STORAGE
• TRANSISTORS
• JUNCTIONS
• WORK
• ACCESS
• ROOM TEMPERATURE
• STRUCTURES
• CELLS
• PROCESSING

Subject Categories:

• Electrical and Electronic Equipment
• Recording and Playback Devices
• Mechanics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE