Improvement and Analysis of the Radiation Response of RADFET Dosimeters
Final rept. 17 Aug 1990-15 Jun 1992
RADIATION EXPERIMENTS AND MONITORS OXFORD (UNITED KINGDOM)
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This is the Final Report on the preparation of three lots of improved RADFET dosimeter devices with the partial support U.S. Army Contract No. DAJA45-90-C-0042 and scientific collaboration from CECOM personnel visiting the UK, including radiation testing of RADFET samples. A silicon RADFET wafer fabrication run was made and tests of performance under irradiation were made, including a pulsed X-ray test as guests of the UK Ministry of Defence, correlated with tests on a Co-60 gamma therapy source and copper tube X-rays. A new design of chip carrier was evaluated and found to be a useful advance in dosimeter packaging technique. The thickest oxide grown was 1.24 micro-meters. This had high responsivity and was very stable. The Army decided to have chips from these wafers packaged for the second and third deliveries.
- Radiation and Nuclear Chemistry
- Manufacturing and Industrial Engineering and Control of Production Systems
- Nuclear Instrumentation