Accession Number:

ADA252644

Title:

GaAs Heterojunction Device Based A/D Converter Development

Descriptive Note:

Final rept. Aug 1987-Mar 1992,

Corporate Author:

TRW ELECTRONIC SYSTEMS GROUP REDONDO BEACH CA

Report Date:

1992-04-01

Pagination or Media Count:

61.0

Abstract:

This final report summarizes the technical work performed on the development of a GaAs Heterojunction analog-to-digital converter. The program goal was to develop a 12 bit 20 Msps, 1 Watt20 Msps ADC implemented as a single monolithic chip or at most 2 chips. The part developed on this program is a single chip monolithic GaAs Heterojunction Bipolar Transistor HBT ADC that includes a samole-and-hold SH and all of the active circuitry required for stand alone operation. The ADC development was taken to the point of fabricating one lot of 3 wafers, wafer probing, and packaging a few of the best candidate ADCS. Yield on the first and only lot was 18 for 4 MBE wafers. Three MOCVD wafers had low beta and were not finished. Several parts were packaged. Electrical trimming was accomplished on the first 5 most significant bits msbs and triangle and sine waveforms processed through the ADC. The chip demonstrated the highest reported SNR of 49.7 dB for a GaAs ADC 8 bit theoretical SNR49. 9DB.

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE