High Translational Energy Induced Reaction in Semiconductors
Final rept. 1 Aug 1988-30 Nov 1991,
CORNELL UNIV ITHACA NY LAB OF ATOMIC AND SOLID STATE PHYSICS
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The main objectives of this project are to develop novel instrumentation and to understand bond breaking and formation on semiconductor surfaces. The approaches used in achieving these objectives are to determine the dependence of adsorption on the translational and vibrational energies of incident molecules and to investigate energy exchange at surfaces. The systems which have been investigated in detail are the dissociative adsorption of carbon dioxide and the nondissociative adsorption of ethane on silicon surface. For these experiments a unique differentially pumped, time-resolved spectrometer, a molecular beamline, and a ultrahigh vacuum chamber with surface instrumentation were designed and constructed.
- Physical Chemistry
- Test Facilities, Equipment and Methods