Accession Number:

ADA250672

Title:

Triisopropylindium, A New Precursor for OMVPE Growth

Descriptive Note:

Technical rept.

Corporate Author:

UTAH UNIV SALT LAKE CITY DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1992-05-22

Pagination or Media Count:

31.0

Abstract:

The organometallic vapor phase epitaxial OMVPE growth of In- containing III-V semiconductors typically uses trimethylindium TMIn. However, TMIn suffers from several problems. First, it is well known that the effective vapor pressure of solid TMIn changes with time because of changes in the surface area. Secondly, TMIn decomposes slowly for temperatures lower than 400 deg C in an atmospheric pressure OMVPE reactor it is too stable for some low-temperature applications. In addition, it causes carbon contamination, especially at low temperatures, due to the CH3 radicals. Thus, there is a need for new In precursors that are liquids at room temperature and do not contain CH3 radicals. This work reports the first decomposition and OMVPE growth studies for a newly developed indium source, triisopropylindium TIPIn. The decomposition was carried out in an isothermal flow tube reactor with the reaction products analyzed using a mass spectrometer. The temperature for 50 decomposition is approximately 110 deg C for TIPIn in a He ambient. This is about 200 deg C lower than that for TMIn under similar conditions. The mass spectroscopic peaks occur at me39, 42, 43, 71, and 86, indicating that the major product for TIPIn decomposition is C6H14.

Subject Categories:

  • Organic Chemistry
  • Chemical, Biological and Radiological Warfare

Distribution Statement:

APPROVED FOR PUBLIC RELEASE