OMVPE Growth of InAsSbBi and Related Alloys Using New Organometallic Group V Sources
UTAH UNIV SALT LAKE CITY DEPT OF MATERIALS SCIENCE AND ENGINEERING
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The major goal of the project is the organometallic vapor phase epitaxial OMVPE growth of a new IIIV alloy, InAsSbBi, with a band gap of 0.1 eV at 77 K. This material is expected to be useful for infrared detectors with response in the wavelength range from 8 to 12 microns. The alloy is metastable, but for certain growth conditions it can be produced by OMVPE. This requires very low growth temperatures of 250-350 deg C. This, in turn requires that new organometallic In and Sb precursors be developed which pyrolyze at lower temperatures than the conventional sources trimethylindium TMIn and trimethylantimony TMSb. A related goal is to produce materials suitable for device fabrication.
- Organic Chemistry
- Solid State Physics