Accession Number:

ADA250631

Title:

OMVPE Growth of InAsSbBi and Related Alloys Using New Organometallic Group V Sources

Descriptive Note:

End-of-the-year rept.,

Corporate Author:

UTAH UNIV SALT LAKE CITY DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1992-06-01

Pagination or Media Count:

14.0

Abstract:

The major goal of the project is the organometallic vapor phase epitaxial OMVPE growth of a new IIIV alloy, InAsSbBi, with a band gap of 0.1 eV at 77 K. This material is expected to be useful for infrared detectors with response in the wavelength range from 8 to 12 microns. The alloy is metastable, but for certain growth conditions it can be produced by OMVPE. This requires very low growth temperatures of 250-350 deg C. This, in turn requires that new organometallic In and Sb precursors be developed which pyrolyze at lower temperatures than the conventional sources trimethylindium TMIn and trimethylantimony TMSb. A related goal is to produce materials suitable for device fabrication.

Subject Categories:

  • Organic Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE