Accession Number:
ADA250399
Title:
III-V Heterojunction Structures and High Speed Devices
Descriptive Note:
Final rept. 1 Jan 1989-31 Dec 1991,
Corporate Author:
ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
Personal Author(s):
Report Date:
1992-03-02
Pagination or Media Count:
42.0
Abstract:
Growth conditions have been established for GaAs, InGaAs, InP and InGaP using the newly installed Gas Source Molecular Beam Epitaxy apparatus. A study was conducted on the pseudomorphic epitaxy of Si on GaAs. MIS structures were pursued through various SiN x and SiGe x interlayers. Author
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics