Accession Number:

ADA250399

Title:

III-V Heterojunction Structures and High Speed Devices

Descriptive Note:

Final rept. 1 Jan 1989-31 Dec 1991,

Corporate Author:

ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1992-03-02

Pagination or Media Count:

42.0

Abstract:

Growth conditions have been established for GaAs, InGaAs, InP and InGaP using the newly installed Gas Source Molecular Beam Epitaxy apparatus. A study was conducted on the pseudomorphic epitaxy of Si on GaAs. MIS structures were pursued through various SiN x and SiGe x interlayers. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE