RF Vacuum Electronics
Quarterly research and development rept. no. 2, 1 Jan-31 Mar 1992,
HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN
Pagination or Media Count:
We summarize our second quarter progress and discuss third quarter plans for the development of an edge emitter based vacuum triode with performance goals of 10 micro Amicrometer emission current density at less than 250V and which can be modulated at 1 GHz for 1 hour. Design and layout of the emitter test mask was completed and fabrication of two process runs of edge emitter diodes were completed. These diode emitters utilize a comb emitter design where high resistivity TaN thin films act as current limiters to prevent edge burnout. Testing of these devices will start during the third quarter. Initial design work on the edge emitter triode was started and is described. Extensive finite element modeling FEM and analysis to aid in the triode design took place and is described. Significant process development also took place. Experimental studies of dielectrics such as sputtered SiO2, Si3N4 and PECVD SiO2 and Si3N4 were carried out to understand their leakage characteristics and, thus, understand their impact on emitter performance. A description of our vacuum test station is also given.
- Electrical and Electronic Equipment