Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled AlGaAs/GaAs Multiquantum Well IR Detectors for Focal Plane Array Staring IR Sensor Systems
Quarterly rept. no. 3, 1 Feb-30 Apr 1992,
FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING
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In this reporting period, we have continued to make a significant progress towards the program goals. We have designed, fabricated and characterized several metal grating coupled bound-to-miniband BTM and step- bound-to-miniband SBTM transition QWIPs on the GaAs ad InP substrates for 8-12 microns focal plane arrays staring infrared sensor applications. Specific tasks performed include 1 the design and growth of several BTM GaAs- and SBTM in GaAs-based QWIP structures as well as a new type-II normal incident AlAsAlGas QWIP structure by using molecular beam epitaxy MBE technique, 2 the design and fabrication of the 1-D line-grating and 2-D cross-grating metal grating couplers on the QWIPs with different granting periods 1.1, 3.2, 5, 7. 2, and 10 microns, 3 the theoretical and experimental studies of the light coupling quantum efficiency versus grating period for the QWIPs, and 4 the theoretical and experimental studies of the dark current versus temperature and bias voltage for the BTM and SBTM QWIPs.
- Infrared Detection and Detectors
- Solid State Physics