Accession Number:

ADA250142

Title:

The Preparation of (Al2O3)x(SiO2)y Thin Films Using (Al(OSiEt3)3)2 as a Single Source Precursor

Descriptive Note:

Technical rept.

Corporate Author:

HARVARD UNIV CAMBRIDGE MA DEPT OF CHEMISTRY

Report Date:

1992-05-12

Pagination or Media Count:

34.0

Abstract:

Aluminum silicates, Al2O3xSiO2y, are attractive candidates as corrosion and wear-resistant coatings for metals and other substrates, due to their superior properties of creep resistance, thermal expansion, and chemical stability. Recently, it has been proposed that amorphous alumina-silica films would find application as insulators in multilevel interconnections, and as encapsulants for active devices and thin film components, because they do not suffer the temperature instability of alumina films while retaining the desirable insulating characteristics. Thin films of aluminum silicates have been previously prepared by either sol-gel techniques or the pyrolysis of aluminum-silicon containing polymers. However, there remain some difficulties in obtaining homogeneous and continuous films. Metal-organic chemical vapor deposition MOCVD offers and attractive alternative to these methods, since contiguous, homogeneous thin films can be deposited at low temperatures with high growth rates.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE