Scanning Tunneling Microscopy
Final rept. 1 Oct 1987-30 Sep 1990
NOTRE DAME UNIV IN DEPT OF PHYSICS
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Scanning tunneling microscopy STM has been used to image and modify the surfaces of III-V, II-VI and group IV semiconductors. A tip-simulator based on a photocode was developed. The simulator allows the development of ultra- sensitive electronics for controlling STM tip movement. Various forms of nano- machining, including chiselling, sanding, and sweeping of atoms on a surface, were developed. An STM design was modified to allow bending of long thin samples of Si100 in UHV to permit the study of surface strain. A variety of studies were conducted on Au in air CdTe in air, Hgsub 1-xMnsub xTe under glycerin, and Hgsub 1-xCdsub xTe in air and under glycerin.