Accession Number:

ADA248570

Title:

Theory of Semiconducting Superlattices and Microstructures

Descriptive Note:

Final rept. 16 Apr 1984-30 Sep 1990

Corporate Author:

NOTRE DAME UNIV IN DEPT OF PHYSICS

Personal Author(s):

Report Date:

1992-03-01

Pagination or Media Count:

433.0

Abstract:

This final report summarizes theoretical work on semi conducting superlattices and microstructures. A focus of the work is a fundamental understanding of deep-level structures of impurities in semiconductors. Probably the most striking results in this area concern IV-VI semiconductors such as PbTe and SnTe, where we have originated the concept of false valence In on a Te site in SnTe is a triple acceptor and has normal valence of -3 with respect to Te. But on a Te site in PbTe, In is a triple donor with a false valence of 3 with respect to Te because an In deep p-like one-electron level capable of trapping six electrons crosses the gap as x decreases in Pbl-xSnxTe. This theory predicts that In is a donor in PbTe but an acceptor in SnTe it argues that in IV-VI semiconductors impurities often occupy the intuitively wrong site or antisite it shows that the relevant In occupies Te sites it explains low doping efficiencies and it shows promise for explaining solidus curves.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE