Accession Number:

ADA248448

Title:

Study of Ultra Short HFET Devices with InP Substrates

Descriptive Note:

Final rept. 1 Dec 1988-30 Nov 1991

Corporate Author:

CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1992-01-30

Pagination or Media Count:

26.0

Abstract:

This research covered modulation-doped field effect transistors MODFETs of AlInAsGaInAsAlInAsInP grown by molecular beam epitaxy MBE. These are the highest frequency transistors yet made, but generally suffer from problems. The problem studied is that of obtaining well-behaved current vs voltage characteristics for these transistors, including reducing the anomalous kink effect, and increasing breakdown voltage. The most important results are the near-elimination of the kink effect by using reduced arsenic flux in the MBE growth, and sharply -1001 reduction of the gate breakdown current by using a barrier-enhancement acceptor doping plane under the gate. Near pinch-off, the drain-source voltage at breakdown was doubled. Additionally, the optimization of the fabrication technology of the mushroom or T shaped gates was completed for these devices, and integrated circuits for millimeter amplifiers and oscillators were designed and fabricated.

Subject Categories:

  • Electromagnetic Shielding

Distribution Statement:

APPROVED FOR PUBLIC RELEASE