Accession Number:

ADA248424

Title:

Research into MBE for Use in Photovoltaic Diode Detectors

Descriptive Note:

Final rept. 16 Sep 1986-31 Dec 1988

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1989-03-03

Pagination or Media Count:

68.0

Abstract:

The overall objective of this program is to grow advanced multilayer heterojunction epitaxial structures suitable for photovoltaic detection in the 12 micron spectral region using molecular beam epitaxy MBE on optically transparent substrates. Investigations under the program include the growth of single epitaxial layers of HgCdTe by MBE, doped both n- and p-type using extrinsic dopants, and the successive growth of layers for forming double-layer p-n heterojunctions DLHJs. The layers and the junctions are evaluated using a variety of diagnostic tools to determine chemical, electrical, and structural characteristics pertinent to IR detector performance. Substantial progress has been made in several critical areas of the program. We have established a strong MBE capability for growing device quality HgCdTe layers required for IR detector fabrication. The MBE system has been systematically modified and state-of-the-art layers of HgCdTe with excellent control in composition and semiconductor properties have been grown.

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE