Accession Number:

ADA248330

Title:

Physics and Technology of III-V Pseudomorphic Structures

Descriptive Note:

Interim rept. 1 Oct 1990-30 Sep 1991

Corporate Author:

CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1991-03-01

Pagination or Media Count:

101.0

Abstract:

We have developed an in situ technique for determining the group-V composition in gas-source molecular beam epitaxy GSMBE growth of mixed group-V compounds, such as GaAsP, InAsP, and InGaAsP. The in situ technique consists of monitoring the intensity oscillations of group-V-induced reflection high-energy electron diffraction RHEED. We have grown high-quality InAsPInP strained- layer superlattices with exciton emission at 1.06, 1.3, or 1.55 microns, suitable for long-wavelength modulator applications. We have also explored the capability of GSMBE by investigating low-temperature-growth InP and p-type carbon doping in In0.5Ga0.5As and In0.5Ga0.5P.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE