Accession Number:

ADA248103

Title:

Laser Processing for Interconnect Technology

Descriptive Note:

Final rept. 1 Oct 1985-30 Nov 1991

Corporate Author:

GENERAL ELECTRIC CO SCHENECTADY NY RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1992-02-27

Pagination or Media Count:

127.0

Abstract:

The overall objective of this program has been to investigate laser- activated chemistry for fabrication of metal lines on low dielectric constant substrates. The need to provide highly conductive metal on polymeric substrates with epsilon 3.5 is essential for high-speed interconnect technology. Using lasers to fabricate these interconnects offer unique possibilities and advantages over more conventional lithography approaches. Since the laser can be put under computer control, the possibility exists for rapid design modifications. Initial results of work performed on this contract were reported in a Phase I final report entitled, Laser-Activated Metal Deposition, January 31, 1988. This Phase I report covers work during the period of October 1, 1985 to December 31, 1987. Work carried out during that time period included a survey of laser-driven processes for metal deposition from organometallic compounds and investigations into various gas phase and thin film metal deposition processes. The key output of that activity was the development of a process to selectively deposit copper on polyimide. The approach uses a CW laser at 351 nm to irradiate organometallic palladium compounds to selectively deposit catalytic amounts of palladium on polyimide. Subsequent immersion of the irradiated samples in an electroless copper solution resulted in selective copper deposition. Since only a few monolayers of palladium were needed to catalyze the electroless copper process, fast writing speeds of up to 10 cms were achieved.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE