Accession Number:

ADA247795

Title:

Quantum Devices

Descriptive Note:

Final rept. 28 Sep 1990-27 Sep 1991

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Nathan, Marshall I.

Report Date:

1992-01-01

Pagination or Media Count:

4.0

Abstract:

This purpose of this project was to study novel quantum effects in microstructures, which might have electronic device potentials. The effects we chose to study are in one-dimensional 1-D wires, i.e., wires with transverse dimensions small compared to coherence lengths. We have completed the mask design which will allow us to study current flow in 1-D wires. Transverse dimensions are varied by making wires with different transverse dimensions lithographically. Up to the present time, transverse dimension variation has been accomplished by changing the voltage means split gate Schottky contacts along the wire. Steps can be observed in the IV curves of wires. The advantage lithographic definition of the wires is that wire dimensions can be measured directly and quality of the lithography can be assessed. A second experiment on the mask will allow us to study exchange effects of electrons in two wires. Ruden and Wu have predicted that the exchange effect between two coupled 2-D gases can be appreciable can cause the lowest energy state to be the state with all the electrons in one channel rather half the electrons in each channel might be expected. For 2-D gases the effect is small and is expected to be observable only in the liquidate temperature range.

Descriptors:

• *QUANTUM ELECTRONICS
• TEMPERATURE
• MICROSTRUCTURE
• SIZES(DIMENSIONS)
• QUANTUM THEORY
• WIRE
• ENERGY
• FLOW
• EXCHANGE
• TRANSVERSE
• MASKS
• CHANNELS
• RANGE(EXTREMES)
• COHERENCE
• VARIATIONS
• LITHOGRAPHY
• ELECTRONS
• QUALITY
• LENGTH

Subject Categories:

• Electrical and Electronic Equipment
• Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE