Accession Number:

ADA247694

Title:

Leakage Current Measurements in SOI Devices

Descriptive Note:

Final rept, Apr 1989-Mar 1990

Corporate Author:

SYRACUSE UNIV NY

Personal Author(s):

• Surya, Charles

Report Date:

1991-12-01

Pagination or Media Count:

17.0

Abstract:

Total dose response of both NMOS and PMOS FETs fabrication on SOI substrates were studied. Back channel leakage currents were studied. Two types of SOI substrates were chosen to study back channel leakage currents SIMOX and ZMR. Subthreshold current-voltage characteristics as a function of total dose of the back channel and front channel of SIMOX and ZMR SOI substrates are reported. Some preliminary reports on the buried oxide leakage current are also provided. Bach channel leakage, SIMOX, ZMR, Total Dose Response.

Descriptors:

• *FABRICATION
• FUNCTIONS
• VOLTAGE
• OXIDES
• CHANNELS
• CURRENTS
• RESPONSE
• SUBSTRATES
• REPORTS

Subject Categories:

• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE