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Leakage Current Measurements in SOI Devices
Final rept, Apr 1989-Mar 1990
SYRACUSE UNIV NY
Pagination or Media Count:
Total dose response of both NMOS and PMOS FETs fabrication on SOI substrates were studied. Back channel leakage currents were studied. Two types of SOI substrates were chosen to study back channel leakage currents SIMOX and ZMR. Subthreshold current-voltage characteristics as a function of total dose of the back channel and front channel of SIMOX and ZMR SOI substrates are reported. Some preliminary reports on the buried oxide leakage current are also provided. Bach channel leakage, SIMOX, ZMR, Total Dose Response.
APPROVED FOR PUBLIC RELEASE