Accession Number:

ADA247423

Title:

Large-Area, Plasma-Assisted, Halogen-Based Diamond Deposition

Descriptive Note:

Quarterly rept. no. 1-2, 31 Dec 1991-3 Mar 1992,

Corporate Author:

RESEARCH TRIANGLE INST (RTI) RESEARCH TRIANGLE PARK NC

Personal Author(s):

• Rudder, R. A.

Report Date:

1992-03-04

Pagination or Media Count:

53.0

Abstract:

A number of chemical systems have been evaluated for diamond growth in the parallel plate capacitive systems. Unlike previous work in the rf inductive systems, diamond growth from H2CH4, H2CHI, and H2OCH3 OH systems in the parallel plate was not forthcoming. Analysis of the critical differences between the rf inductive vs rf capacitive coupling identified the plasma density and the degree of plasma dissociation to be the substantial differences. We have embarked on a course to evaluate scale of the rf inductive technology- by development of a planar inductive coil which would merely replace the capacitive plate on standard large area rf system. Preliminary results show that creation of a high density plasma at low pressures and modest power levels over a 100 nm area is feasible with the current 500W power supply. No diamond growths have yet been attempted.

Descriptors:

• *DIAMONDS
• COUPLINGS
• COILS
• CHEMICALS
• PLATES
• SCALE
• HIGH DENSITY
• POWER SUPPLIES
• STANDARDS
• POWER
• WORK
• SUPPLIES
• NUMBERS
• DISSOCIATION
• POWER LEVELS
• DENSITY

Subject Categories:

• Geology, Geochemistry and Mineralogy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE