DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
ADA247332
Title:
Analysis of Radiation Damaged and Annealed Gallium Arsenide and Indium Phosphide Solar Cells Using Deep Level Transient Spectroscopy Techniques
Descriptive Note:
Master's thesis
Corporate Author:
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Report Date:
1991-03-01
Pagination or Media Count:
181.0
Abstract:
Degradation of solar cell performance from radiation damage was found to be reversed through annealing processes. The mechanisms behind the degradation and recovery is based on deep-level traps, or defects, in the lattice structure of the solar cell. Through a process known as Deep Level Transient Spectroscopy DLTS, a correlation can be made between damagerecovery and trap energy levelconcentration of the cell. Gallium Arsenide GaAs and Indium Phosphide InP solar cells were subjected to 1 MeV electron irradiation by a Dynamitron linear acceleration at two fluence levels of 1E14 and 1E15 electronssq cm. The process of annealing included thermal annealing at 90 C with forward bias current and thermal annealing alone for GaAs. After each cycle, DLTS measurements were taken to determine the energy level of the traps and their concentration. Multiple cycles of irradiation, annealing and DLTS were performed to observe the correlation between degradation and recovery to trap energy level and concentration. The results show that the lower energy level traps are associated with the recovery of the cells while the higher level traps are associated with the overall permanent degradation of the cells.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
