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Accession Number:
ADA247047
Title:
Spectroscopy and Reactions of Hydrazoic Acid on Silicon Single Crystal Surfaces. (2). HN3 and DN3 on Si (100)
Descriptive Note:
Technical rept. No. 9
Corporate Author:
EMORY UNIV ATLANTA GA DEPT OF CHEMISTRY
Report Date:
1992-01-01
Pagination or Media Count:
12.0
Abstract:
Hydrazoic acid HN3 was employed-for the first time as a nitrogen source for nitridation of Si surfaces. Its spectroscopy and reactions on different low Miller index surfaces have been investigated with XPS, UPS X-ray and ultra-violet photoelectron spectroscopy, AES Auger electron spectroscopy and HREELS high resolution electron energy loss spectroscopy at temperatures between 120 and 1350 K. This study focuses on the spectroscopy and reactions on the Si100 surface. HN3 was found to adsorb molecularly on these surfaces since all molecular vibrational peaks such as the HN-NN stretching vibration at 150 meV, the HNNN stretching vibration at 270 meV and the H-N3 stretching vibration at 415 meV could be clearly observed by HREELS. These assignments were confirmed by an isotopic study using DN3. Warming the surface from 120 to 250 K caused HN3 HN3 to desorb as well as to decompose into N2 and NH, which further dissociated to produce N and H as the surface was annealed from 580 to 800 K. The presence of H adatoms was revealed by the appearance of the Si-H stretching vibration at 267 meV. At Ts 800 K, H atoms began to desorb, while N remained on the surface forming Si3N4 at Ts 1350 K. These observations were fully corroborated by UPS, XPS and AES data. The results of AES and UPS analyses also indicate that nitrogen could diffuse into the bulk of Si 100, similar to the Sil 10 case. Silicon 100, Hydrazoic acid, Nitridation, Characterization.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
