Accession Number:

ADA247006

Title:

Numerical Simulation of the Function of Scientific Instrumentation for Measuring the Speed of Electron Devices

Descriptive Note:

Final rept. 1 Sep 1988-28 Feb 1991

Corporate Author:

SCIENTIFIC RESEARCH ASSOCIATES INC GLASTONBURY CT

Personal Author(s):

• Grubin, H. L.
• Kreskovsky, J. P.
• Briley, W. R.
• Andrews, G. A.
• Osman, M. A.

Report Date:

1992-02-13

Pagination or Media Count:

113.0

Abstract:

Implementation of three algorithms, 1 moment equation, 2 Monte Carlo, and 3 quantum Liouville equation algorithms, were used in a program to determine the high speed and high frequency operation of submicron electron devices. For a psuedomorphic high electron mobility transistor, high frequency, small signal, subpicosecond charge density waves were observed to form within the two dimensional electron gas. Large signal operation of the PHEMT indicated that the switching time of the device was governed by the longest relaxation effect, the energy relaxation time, estimated to be longer than two picoseconds. A simple two terminal device configuration was examined. It was determined that measurements of its transient behavior, would expose differences in the key relaxation times governing III-V device behavior, and provide the first direct measurement of nonequilibrium effects in semiconductor devices. Transient instrumentation, Simulation, Speed, Two-dimensional pseudomorphic HEMT, Picosecond.

Descriptors:

• *SEMICONDUCTOR DEVICES
• VELOCITY
• ALGORITHMS
• FREQUENCY
• SIMULATION
• DENSITY
• ELECTRON GAS
• TIME
• INSTRUMENTATION
• LIOUVILLE EQUATION
• ELECTRON MOBILITY
• TRANSISTORS
• WAVES
• EQUATIONS
• CHARGE DENSITY
• BEHAVIOR
• RELAXATION TIME
• RELAXATION
• ELECTRONIC SWITCHING
• OPERATION
• MONTE CARLO METHOD
• MEASUREMENT
• HIGH FREQUENCY
• MOBILITY
• TWO DIMENSIONAL
• ENERGY

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE