Accession Number:

ADA244925

Title:

RF Vacuum Microelectronics

Descriptive Note:

Quarterly technical rept. 1 Oct-31 Dec 1991,

Corporate Author:

HONEYWELL SENSOR AND SYSTEM DEVELOPMENT CENTER BLOOMINGTON MN

Report Date:

1992-01-15

Pagination or Media Count:

8.0

Abstract:

We summarize our first quarter progress and discuss second quarter plans for the development of an edge emitter based vacuum triode with performance goals of 10 u microampmicron emission current density at less than 250V and which can be modulated at 1 GHz for 1 hour. Device analysis of previously fabricated devices indicate systematic burnout of the edge. This observation indicates that electron heating of the anode andor current concentration at localized microtips may be causing the burnout. This hypothesis has directed the design of new emitter structures to improve current emission and density. Use of high resistivity thin films as current limiters in emitter diodes has been laid out and will be fabricated in the next reporting period. Tantalum nitride appears to have the proper thin film characteristics for use in these diodes. A variety of other devices for diode and thin film characterization have been laid out for subsequent fabrication in the next several reporting periods. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE