Dynamic Processes at Semiconductor Interfaces: Atomic Intermixing, Diffusion Barriers, and Stability
Final rept. 1 Jun 1988-15 Aug 1991,
MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE
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In our studies of interfacial phenomena, we continually sought to develop new ways to form interfaces. This allowed us to examine the role of kinetics and reaction pathways for surface processes, to gain fundamental new insight into interfacial phenomena, and to synthesize new, possibly useful interface structures. The purpose of the experiments was to change the energy of the arriving flux, giving the ions sufficient energy to induce defect formation and to overcome any activation barriers for reaction. In another, we demonstrated that interfaces could be formed by cluster assembly the deposition of clusters onto a surface. In a third, we developed a way of forming monlayer-to-multilayer films of oxygen bearing species on surfaces so that oxidation processes and mechanisms could be explored in ways not previously possible. Each of these innovations has given new insight into thin film growth structures and stabilities.
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