Accession Number:

ADA244642

Title:

Study of Quantum Mechanical Effects in Deep Submicron Grating-Gate Field Effect Transistors

Descriptive Note:

Annual technical rept. 1 Oct 1990-30 Sep 1991,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s):

Report Date:

1991-12-01

Pagination or Media Count:

9.0

Abstract:

This research program investigates the effect of extreme submicron and sub-100 nm spatial modulation of the electrostatic potential on the transport of electrons in heterojunction semiconductor devices. The test vehicle is the so-called periodic-gate FET PGFET, with gate consisting of either a grating or a grid, of 200 nm periodicity. When electrons are made to move in a direction perpendicular to the potential modulation, i.e., perpendicular to the grating of along a grid axis, they exhibit a surface superlattice SSL effect. When moving along the potential modulation of a grating, electrons are restricted to only one degree of freedom and thus constitute a quasi-one- dimensional QID quantum system. Grid-gate FETs have been found to exhibit substantially stronger SSL Behavior than their grating-gate counterparts. Electron transport in quantized and spatially periodic systems have studied theoretically and new insights and quantitative calculations have been obtained. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE