High-Frequency Signal-Processing Integrated Circuits
Final rept. 20 May 87-19 May 91,
CALIFORNIA UNIV BERKELEY COLL OF ENGINEERING
Pagination or Media Count:
A new topology for maximum-bandwidth matched-impedance monolithic amplifiers has been synthesized, fabricated, and tested. Stage gain of 9.3 dB and bandwidth of 3.2 GHz were realized in a 9 GHz Si bipolar monolithic technology. A new variable-gain amplifier with maximum dynamic range has been devised, fabricated, and tested. This achieved 850 MHz bandwidth, 30 dB gain control range and 25 dB maximum gain. Equivalent input noise resistance was 400 Ohm. The successful fabrication of on-chip inductors in Si monolithic circuits was demonstrated, with application to passive filters and bandpass amplifiers in the GHz frequency range. New high-performance monolithic voltage-controlled- oscillators and phase-locked loops were synthesized, built, and tested to verify new design procedures.
- Electrical and Electronic Equipment