Accession Number:

ADA244410

Title:

High-Frequency Signal-Processing Integrated Circuits

Descriptive Note:

Final rept. 20 May 87-19 May 91,

Corporate Author:

CALIFORNIA UNIV BERKELEY COLL OF ENGINEERING

Personal Author(s):

Report Date:

1991-08-26

Pagination or Media Count:

9.0

Abstract:

A new topology for maximum-bandwidth matched-impedance monolithic amplifiers has been synthesized, fabricated, and tested. Stage gain of 9.3 dB and bandwidth of 3.2 GHz were realized in a 9 GHz Si bipolar monolithic technology. A new variable-gain amplifier with maximum dynamic range has been devised, fabricated, and tested. This achieved 850 MHz bandwidth, 30 dB gain control range and 25 dB maximum gain. Equivalent input noise resistance was 400 Ohm. The successful fabrication of on-chip inductors in Si monolithic circuits was demonstrated, with application to passive filters and bandpass amplifiers in the GHz frequency range. New high-performance monolithic voltage-controlled- oscillators and phase-locked loops were synthesized, built, and tested to verify new design procedures.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE