Accession Number:

ADA244349

Title:

Quantum 1/f Noise in Solid-State Devices in Particular Hg(1-x)Cd(x)Te N(+)-p Diodes

Descriptive Note:

Final rept.,

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1991-08-01

Pagination or Media Count:

89.0

Abstract:

Under the grant measurements of the spectral intensity of the current fluctuations produce by n-p mercury cadmium telluride diodes, p-i-n HgCdTe diodes, AlGaAsGaAs laser diodes, InGaAsIndium phosphide p-i-n diodes, silicon bipolar transistors, Aluminum gallium arsenideGaAs heterojunction bipolar transistors, silicon junction field effect transistors, and AlGaAsGaAs resonant tunneling diodes were taken in the frequency range from 1 Hz to 100 kHz under different bias conditions and in the temperature range from 78-400 k. In addition, progress was made on the theoretical aspects of quantum 1f noise.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Cybernetics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE