Quantum 1/f Noise in Solid-State Devices in Particular Hg(1-x)Cd(x)Te N(+)-p Diodes
MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
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Under the grant measurements of the spectral intensity of the current fluctuations produce by n-p mercury cadmium telluride diodes, p-i-n HgCdTe diodes, AlGaAsGaAs laser diodes, InGaAsIndium phosphide p-i-n diodes, silicon bipolar transistors, Aluminum gallium arsenideGaAs heterojunction bipolar transistors, silicon junction field effect transistors, and AlGaAsGaAs resonant tunneling diodes were taken in the frequency range from 1 Hz to 100 kHz under different bias conditions and in the temperature range from 78-400 k. In addition, progress was made on the theoretical aspects of quantum 1f noise.
- Electrical and Electronic Equipment
- Lasers and Masers
- Solid State Physics