Polymer Resist Systems for Advanced Microlithography
Final rept. 1 Jun 85-31 Dec 91,
CORNELL UNIV ITHACA NY SCHOOL OF CHEMICAL ENGINEERING
Pagination or Media Count:
The aim throughout this work has been to produce and characterize resist systems with enhanced sensitivity, resolution, and etch resistance. New polymers and polymer systems were evaluated as e-beam and x-ray resists using gamma radiation, flood exposure to electrons, synchrotron radiation, and e-beam patterning. The systems investigated have included copolymers and blends. In particular, reactive plasticizers were found to impart high sensitivity to negative-working resists with good resolution. Because of the overwhelming importance of the development step in producing high resolution patterns, dissolution rate measurements were refined and applied to a number of problems. As far as resistance to ion-assisted plasma etching is concerned, our studies have established the importance of conditions including flow rates, power density, pressure, etc.
- Coatings, Colorants and Finishes
- Printing and Graphic Arts