Material Effects in Photoconductive Frozen Wave Generators
Rept. for 1 Jun 1989-30 Sep 1989
ROME LAB ROME NY
Pagination or Media Count:
Linear photo-conductive gallium arsenide GaAs fast closing switches for microwave applications, such as frozen wave pulse generation, are analyzed and compared to experimental measurements. Material effects in photo-conductive frozen wave generators fabricated in semiconductor-based microstrip transmission line are studied from three perspectives frozen wave propagation in the line the spacing between the switches in a frozen wave generator and their maximum number and the switching behavior of the gap-switch itself, which is modeled as a lumped-element, modified Ebers-Moll equivalent circuit. The experimental transient behavior of hybrid gap-switches fabricated on semi-insulating GaAs with ohmic and non-ohmic contacts is compared with predicted performance. Picosecond laser pulses, doubled to 527 micron wavelength are used to excite linear photoconductivity in 75 micron gap switches mounted in a test fixture of 50 ohm microstrip lines on alumina.
- Solid State Physics