Accession Number:

ADA244140

Title:

Material Effects in Photoconductive Frozen Wave Generators

Descriptive Note:

Rept. for 1 Jun 1989-30 Sep 1989

Corporate Author:

ROME LAB ROME NY

Report Date:

1991-04-01

Pagination or Media Count:

36.0

Abstract:

Linear photo-conductive gallium arsenide GaAs fast closing switches for microwave applications, such as frozen wave pulse generation, are analyzed and compared to experimental measurements. Material effects in photo-conductive frozen wave generators fabricated in semiconductor-based microstrip transmission line are studied from three perspectives frozen wave propagation in the line the spacing between the switches in a frozen wave generator and their maximum number and the switching behavior of the gap-switch itself, which is modeled as a lumped-element, modified Ebers-Moll equivalent circuit. The experimental transient behavior of hybrid gap-switches fabricated on semi-insulating GaAs with ohmic and non-ohmic contacts is compared with predicted performance. Picosecond laser pulses, doubled to 527 micron wavelength are used to excite linear photoconductivity in 75 micron gap switches mounted in a test fixture of 50 ohm microstrip lines on alumina.

Subject Categories:

  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE