Fusible Link Technology for Power Semiconductor Devices
Final rept. 1 Oct 1990-30 Sep 1991
NORTH CAROLINA STATE UNIV AT RALEIGH
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Theoretical and experimental studies were performed to investigate the feasibility for the formation of fusible links by using thin Aluminum films. The results of this research indicate that, by using the Aluminum films of 100 to 200 angstroms in thickness, it is possible to obtain links with fusing currents on the order of 10 milliamperes. These values may be acceptable for the fabrication of large area MOS-gated power devices.
- Electrical and Electronic Equipment