Growth and Characterization of III-V Epitaxial Films
Final rept. Mar 88-Nov 90,
PARKE MATHEMATICAL LABS INC CARLISLE MA
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Investigations were conducted on the growth of epitaxial layers using Organo Metallic Chemical Vapor Deposition technique of selected III-V materials which are potentially useful for photonics and microwave devices. RLERXs MOCVD machine was leak checked for safety. The whole gas handling plumbing system has been leak checked and the problems were reported to the manufacturer, CVD equipment Corporation of Dear Park, NY. CVD Equipment Corporation is making an effort to correct these problems and also supply the part according to our redesign specifications. One of the main emphasis during this contract period was understanding the operating procedure and writing an operating manual for this MOCVD machine. To study the dynamic fluid flow in the vertical reactor of this MOCVD machine, an experimental apparatus was designed, tested and put together. This study gave very important information on the turbulent gas flow patterns in this vertical reactor. The turbulent flow affects the epitaxial growth adversely. This study will also help in redesigning a vertical reactor so that the turbulent gas flow can be eliminated.