Accession Number:

ADA244059

Title:

Reactive Ion Etching of Selected Polymers in O2 and CF4/O2

Descriptive Note:

Technical rept.,

Corporate Author:

CORNELL UNIV ITHACA NY SCHOOL OF CHEMICAL ENGINEERING

Report Date:

1991-12-18

Pagination or Media Count:

22.0

Abstract:

A series of 17 polymers was etched in RIE mode in oxygen alone and in a mixture of carbon tetrafluoride with oxygen 8 O2. Rates were monitored using a laser interferometer. The etch rates in oxygen at 0.25 wattcm2 fell in the range of 200-300 nmmin for the aromatics polystyrene and derivatives, 350-450 nmmin for the aliphatics methacrylates and vinyl acetate, and 500-850 nmmin for the cellulosics methyl ether and nitrate. At a power density of 0. 50 wattcm2 the etch rates were about 75 to 80 higher than those at the lower power density. The etch rate in the fluoride mixture was about half that in the oxygen, all other parameters being the same. Plasticizers which lower the Tg of polymers based on vinyl chloride, methyl methacrylate, or styrene do not change the etch rate of the polymers very much. There is slight increase in the rate for polystyrene and a slight decrease in the rate for polymethyl methacrylate. All the compositional effects on etching rate seem to be related to the mole fractions of carbon and oxygen in the resist.

Subject Categories:

  • Polymer Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE