Accession Number:

ADA243987

Title:

Semiconductor Diamond Technology

Descriptive Note:

Quarterly rept. no. 2, 1 Apr-30 Jun 1991

Corporate Author:

RESEARCH TRIANGLE INST (RTI) RESEARCH TRIANGLE PARK NC

Personal Author(s):

• Markunas, R. J.
• Rudder, R. A.
• Posthill, J. B.
• Thomas, R. E.

Report Date:

1991-12-31

Pagination or Media Count:

55.0

Abstract:

This document presents papers representing work in 1 Surface chemistry 2 Gas-phase diagnostics 3 Homoepitaxial growth 4 IGFET fabrication and 5 Halogen-assisted CVD. Of particular interest was the surface chemistry work expounding the roles of atomic hydrogen on the diamond 100 surface. Atomic hydrogen chemisorbs on the diamond surface at monolayer saturations. Atomic hydrogen does not readily insert on the carbon surface dimer bonds. At dose levels exceeding a monolayer, CH3 and C2H2 desorptions are detected at temperatures approximately 200 C colder than the H desorption. In addition, preliminary work this quarter showed the capability to produce diamond films from a water-based process which does not involve molecular hydrogen as a process gas.

Descriptors:

• *DIAMONDS
• *SEMICONDUCTING FILMS
• WATER
• FILMS
• SEMICONDUCTORS
• CARBON
• HYDROGEN
• SATURATION
• SURFACES
• CHEMICAL BONDS
• DOSAGE
• LEVEL(QUANTITY)
• SURFACE CHEMISTRY
• DIMERS
• ATOMIC STRUCTURE
• LAYERS
• MOLECULES

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE