Accession Number:

ADA243986

Title:

Semiconductor Diamond Technology

Descriptive Note:

Annual rept. 1 Jan-31 Dec 1991

Corporate Author:

RESEARCH TRIANGLE INST (RTI) RESEARCH TRIANGLE PARK NC

Report Date:

1991-12-31

Pagination or Media Count:

106.0

Abstract:

The development of techniques to enhance diamond heteronucleation without abrasive ex situ surface treatment now permits researchers to study diamond heteronucleation epitaxy at growth temperatures far below the thermal desorptions of hydrogen H and oxygen O. At these temperatures, surface chemistry on the nucleating surface will be controlled by chemical exchange and abstraction reactions. This final report highlights the important results achieved during 1991 in diamond production and in diamond surface chemistry. Of particular interest are O and H interactions on diamond 100 surfaces and the development of water-based processes exclusive of molecular hydrogen for high quality low temperature diamond growth. The role of oxygen or hydroxyl is becoming increasing illucidated as surface chemistry studies show the propersity for O to terminate and stabilize 1x1 surfaces and as water-based growth processes permit diamond stabilization and growth at lower and lower temperatures.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE