Accession Number:

ADA243970

Title:

Silicon Carbide Thin Film Deposition by Reactive Ion-Beam Sputtering

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1991-12-01

Pagination or Media Count:

69.0

Abstract:

In this study, hydrogenated amorphous silicon carbide thin films were deposited by reactive ion-beam sputtering under varying conditions to determine whether a films optical properties can be controlled, focusing on refractive index. Using a Kaufman type ion source to sputter a pure silicon target, three distinct series of films were grown. The first series varied the mixture of methane and argon used in the ion-beam. holding all other parameters constant. For the second series the gas mix was fixed, and only the beam energy beam voltage was varied. The final series also varied beam energy, but was grown with a graphite shield next to the target to reduce metal contamination sputtered from chamber surfaces. Results show the index of refraction increased monotonically with beam energy up to a beam voltage of 1300 volts. Both the second and third series of films followed this trend, but analysis of differences in atomic composition between two series revealed opposite trends for how the silicon to carbon content ratio and refractive index were related. More precise control of the gas flow, and sputtering from only the intended silicontarget would have reduced experimental errors.

Subject Categories:

  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE