Accession Number:

ADA243936

Title:

Photonic Technology Photonic Devices Research.

Descriptive Note:

Final technical rept. Sep 87-Feb 90,

Corporate Author:

AT AND T TECHNOLOGIES INC GREENSBORO NC FEDERAL SYSTEMS DIV

Personal Author(s):

• Taylor, G. W.

Report Date:

1991-10-01

Pagination or Media Count:

48.0

Abstract:

The suitability of the inversion channel device structures for a photonic technology in an InP based materials technology was investigated. The A1 based and the P based heterosystem lattice matched to the InP substrate were evaluated. Both MBE and MOCVD were used and their relative merits were determined. CBE was investigated and ruled out due to its inability to incorporate the A1. The various members of the inversion channel family were demonstrated in the A1 system and the HFET and the DOES laser were found to be most compatible. HFETS were investigated in more detail and implantation was used optimally to adjust threshold voltage. Lasing was obtained in a hybrid A1P combination and suggests that MOCVD with improved doping control may provide the necessary growth technique for the integrated 1.5 micron technology.

Descriptors:

• CHANNELS
• CONTROL
• DOPING
• GROWTH(GENERAL)
• INVERSION
• LASERS
• MATERIALS
• PHOTONS
• STRUCTURES
• SUBSTRATES
• THRESHOLD EFFECTS
• VOLTAGE

Subject Categories:

• Optics
• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE